Solid Phase Epitaxial Growth.

reportActive / Technical Report | Accession Number: ADA048261 | Open PDF

Abstract:

Low-temperature epitaxial growth of Si by the solid-phase epitaxy SPE process has been studied to determine the effects of contaminants upon the growth process. The major sources of process-induced contaminants in SPE have been reviewed, and methods for eliminating or minimizing these have been developed. We show that under clean conditions an evaporated amorphous Si film will crystallize epitaxially on a Si100 substrate when heated to 525 C, but that the growth is very sensitive to inhibition by atmospheric contaminants. Similarly, SPE growth in the system SiPd2SiSiA has been found to proceed very differently under clean conditions as compared to the standard processing used in previous work. This difference is tentatively attributed to affects of contaminants on the Pd2Si interlayer, not on the Sia film as was previously believed. Author

Author(s):
Roth, J. A. ; Anderson, C. L.
Author Organization(s):
HUGHES RESEARCH LABS MALIBU CALIF
Descriptive Note:
Annual progress rept. 1 May 76-30 Apr 77,
Pagination:
0047

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-75-C-0957
 Subject Terms
Joint Capability Areas:
JCA_6.3.3_Spectrum Management; JCA_6_Net Centric; JCA_6.3_Net Management; JCA_5.3_Planning; JCA_5_Command and Control; JCA_1.2.7_Experimentation; JCA_1.2.5_Lessons Learned; JCA_3.2_Engagement; JCA_3_Force Application; JCA_JCA_4.1.2_Sustain the Force; JCA_4.1_Deployment and Distribution
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*THIN FILMS, *EPITAXIAL GROWTH, *CRYSTAL GROWTH, *SOLID PHASES, LOW TEMPERATURE, AMORPHOUS MATERIALS, ETCHING, SILICON, CONTAMINANTS, SILICIDES, PALLADIUM COMPOUNDS
Field(s)/Group(s):
Crystallography, Solid State Physics
Report Date:
1977 Oct 01