High Voltage, High Power Transistors. Characteristics of Developmental Units.

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Abstract:

A group of ten samples of 300 volt, 10 and 25 ampere, silicon-power transistors manufactured by Westinghouse Electric Corporation has been received by the U.S. Naval Research Laboratory for evaluation. The units have been tested for breakdown, output- and saturation-voltage characteristics, and tabular and photographic data are presented. Breakdown voltages of the semiconductor device itself were of the order of 400 volts on the four samples which were enclosed in the latest case design. Output characteristics, current gain and saturation-voltage are satisfactory.

Author(s):
Lawson, Wilmer M., Jr
Author Organization(s):
NAVAL RESEARCH LAB WASHINGTON D C
Descriptive Note:
Interim rept. no. 7,
Pagination:
0017

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
NRL-MR-1133
 Subject Terms
Joint Capability Areas:
JCA_3.2_Engagement; JCA_3_Force Application
Communities of Interest:
Advanced Electronics
Descriptor(s):
*TEST AND EVALUATION, *ACOUSTIC DETECTION, *TRANSISTORS, HIGH POWER, ELECTRICAL PROPERTIES, SILICON, NAVAL RESEARCH, BREAKDOWN(ELECTRONIC THRESHOLD), HIGH VOLTAGE, TEST FIXTURES
Field(s)/Group(s):
Electrical and Electronic Equipment, Test Facilities, Equipment and Methods, Acoustic Detection and Detectors
Keyword(s):
MOST Project 4, WU4062, LPN S8134, WU8134, LPN RF 001 03 41, WUS0210
Report Date:
1961 Jan 05