InSb MIS Development.

reportActive / Technical Report | Accession Number: ADA043805 | Open PDF

Abstract:

Further improvement on both line and two-dimensional InSb CID arrays has been made. The sensitivity of line arrays has been improved by using thin-gate oxide and low-doping substrate materials, which reduce the input line capacitance. The co-planar two-dimensional array structure also has been further improved. Effort on a low-noise amplifier has been carried out and performance of the JFET preamplifier was much better than that of the MOSFET. The NETD for a line array was found to be 0.11 K using a JFET preamp and 0.5 K using a MOSFET. The measurement was made with a narrow spectral filter of 3.6 to 4.0 microns, f3.25 lens system, and a 500 microsec. integration time. Author

Author(s):
Kim, J. C. ; Swab, J. M.
Author Organization(s):
GENERAL ELECTRIC CO SYRACUSE N Y OPTOELECTRONIC SYSTEMS OPERATION
Descriptive Note:
Final rept. Dec 76-Apr 77,
Pagination:
0027

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00173-77-C-0022
Task Number(s):
XF54583004
Project Number(s):
F54583
 Subject Terms
Joint Capability Areas:
JCA_6.1.3_Switching and Routing; JCA_6.1.1_Wired Transmission; JCA_6.1_Information Transport; JCA_6_Net Centric; JCA_1.4.2_Health Service Delivery; JCA_1.4_Force Support
Communities of Interest:
Advanced Electronics
Descriptor(s):
*DETECTORS, *INFRARED DETECTORS, *INDIUM ANTIMONIDES, METALS, TWO DIMENSIONAL, INTEGRATED CIRCUITS, SUBSTRATES, FIELD EFFECT TRANSISTORS, METAL OXIDE SEMICONDUCTORS, OXIDES, SILICON, DOPING, LINEAR ARRAYS, GOLD, LOW NOISE AMPLIFIERS, CAPACITANCE, JUNCTION TRANSISTORS, ELECTRICAL INSULATION
Field(s)/Group(s):
Infrared Detection and Detectors, Optics, Solid State Physics
Keyword(s):
Charge injection devices, Metal insulator semiconductor devices, PE62762N
Report Date:
1977 Aug 01