Neutron Damage in Silicon from Neutrons with Energy Near 1-MeV.

Youngblood, J. E.; Hollandsworth, C. E.; Van Antwerp, W. R.

Neutron Damage in Silicon from Neutrons with Energy Near 1-MeV.

Active / Technical Report | Accession Number: ADA043268 |

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Abstract:

Silicon diodes have been used to evaluate the damage introduced in silicon by monoenergetic neutrons at several neutron energies near 1 MeV. Eight diodes were irradiated at each of the neutron energies 0.70, 0.96, 1.16, 1.63 and 2.37 MeV. The results are compared with diodes exposed to 14 MeV neutrons and with calculations of displacement permanent damage. It is shown that the damage fluctuates severely for neutron energies near 1 MeV. Author

Author(s):

Youngblood, J. E. ; Hollandsworth, C. E. ; Van Antwerp, W. R.

Author Organization(s):

BALLISTIC RESEARCH LABS ABERDEEN PROVING GROUND MD

Descriptive Note:

Memorandum rept.,

Pagination:

0018

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:

Approved For Public Release

RECORD

Collection: TR

Identifying Numbers

Report Number(s):

BRL-MR-2768

Project Number(s):

1L162118AH75

Subject Terms

Joint Capability Areas:

JCA_5_Command and Control; JCA_5.2_Understand; JCA_3.2_Engagement; JCA_3_Force Application; JCA_3.2.1_Kinetic Means; JCA_1_Force Support; JCA_6_Net Centric; JCA_5.3_Planning; JCA_1.2_Force Preparation; JCA_6.3.3_Spectrum Management; JCA_1.2.3_Educating; JCA_1.2.7_Experimentation; JCA_6.4.1_Secure Information Exchange; JCA_6.3_Net Management

Modernization Areas:

Microelectronics

Communities of Interest:

Energy and Power Technologies

Descriptor(s):

*SILICON, *RADIATION DAMAGE, *NEUTRON BEAMS, COMPUTERIZED SIMULATION, RATIOS, DAMAGE ASSESSMENT, ACCURACY, SEMICONDUCTOR DIODES, VARIATIONS, HIGH ENERGY, NUCLEAR EXPLOSION DAMAGE

Field(s)/Group(s):

Radioactivity, Radioactive Wastes and Fission Products

Keyword(s):

PE62118A, ASH75

Report Date:

1977 Jul 01