Heterojunction Contacts for Transferred-Electron Devices.

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Abstract:

The aim of the research described in this annual report is the development of heterojunction contacts for transferred-electron devices involving the GaInAsP-InP heterojunction system, with InP being the transferred-electron material. The details of the growth of GaInAsP on InP by liquid phase epitaxy are described, and the evaluation of these heterojunctions are discussed. Some computer simulations of heterojunctions are described and preliminary experimental results from GaInAsP-InP n-n heterojunction diodes indicate that the conduction band discontinuity is small for that system. Author

Author(s):
Hayes, Russell E.
Author Organization(s):
COLORADO UNIV BOULDER DEPT OF ELECTRICAL ENGINEERING
Descriptive Note:
Annual summary rept. no. 1, 28 Feb 75-31 Jan 76,
Pagination:
0044

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-75-C-0472
Project Number(s):
NR-122-102
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*HETEROJUNCTIONS, *EPITAXIAL GROWTH, *SEMICONDUCTOR DEVICES, MILLIMETER WAVES, LIQUID PHASES, CONDUCTION BANDS, INDIUM PHOSPHIDES
Field(s)/Group(s):
Electrical and Electronic Equipment, Crystallography, Solid State Physics
Keyword(s):
TED(Transferred Electron devices), Transferred electron devices, Electrical contacts, Gallium indium arsenide phosphides, Band gaps, Liquid phase epitaxy, Lattice constants
Report Date:
1976 Sep 01