Silicon Lattice Constraints on Structure of Interface States.

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Abstract:

Wooden ball molecular models were used to study the constraints placed on Si-SiO2 interface structures by the silicon lattice. Where there was just a single bond between the lattice and the amorphous SiO2, no constraints were evident. Where there were two bonds, it was possible to produce a Si-O-Si silica bond where both Si atoms were in the lattice. The two bond case resulted in a structure related to the SiA center in bulk and would create interface states near conduction and valance bands. During oxide growth, successive planes of the lattice are removed, and there is an edge of a partially removed plane where triplets of bonds occur. These triplets provide space for only one oxygen atom. This triply bonded oxygen atom is proposed as a model for the structure of Qss. An oxidation mechanism is assured in which the Si atoms which are part of the positively charged Qss structure we removed by the attraction of a negatively charged oxidizing species. Using this mechanism and the models for Qss and Nss, a form is derived for the radiation susceptibility of the interface. Author

Author(s):
Maier, Roe J.
Author Organization(s):
AIR FORCE WEAPONS LAB KIRTLAND AFB N MEX
Descriptive Note:
Final rept.,
Supplementary Note:
Presented at the IEEE Conference held at San Diego, Calif., on 28 Jul 76.
Pagination:
0023

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFWL-TR-76-506
 Subject Terms
Communities of Interest:
Air Platforms
Descriptor(s):
*INTERFACES, *CRYSTAL LATTICES, *AMORPHOUS MATERIALS, *SEMICONDUCTORS, MODELS, SILICON DIOXIDE, OXYGEN, CHEMICAL BONDS, VALENCE BANDS, SILICON, CONDUCTION BANDS, STOICHIOMETRY
Field(s)/Group(s):
Crystallography, Solid State Physics
Keyword(s):
Interface states, Molecular models
Report Date:
1976 Aug 01