Progress Toward the Crosstie Memory III.

This is the third annual technical report of progress toward the crosstie memory and emphasizes the work done during the past year. In the crosstie memory, information is stored in magnetic domain walls rather than domains and domain wall motion is not used in its operation. The basic building block of the crosstie memory is a magnetic shift register which depends on Bloch line motion rather than domain wall motion. The crosstie memory is intended for use as a block oriented random access memory BORAM or fast auxiliary memory FAM. The advantages of the crosstie memory are speed, low power, high bit density, nonvolatility, a wide temperature range of operation, low cost, and use of available technology. There were two major accomplishments this past year. One is the magnetoresistance detector, the second is the serrated track which simplifies propagation, detection, and fabrication. Present problem areas and approaches to their solution are discussed. Plans and design goals are also presented.