Advanced Solid State Microwave Techniques.

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Abstract:

This report describes the research accomplished during the third biannual period of a three year research program dealing with advanced concepts of microwave generation and control in solids. A report is made on microwave solid state devices and circuits. Included are GaAs Read Diodes Amplifier Characteristics Measurement of IMPATT Diode Amplifier Parameters Computer Experiments on TRAPATT Diodes High Power and Efficiency CW Transferred Electron Oscillators Compound Semiconductor Transistor Study Automated Network Analyzer Submicron Gate Field Effect Transistor IMPATT Diode Load Characteristics and Interaction of Distributed IMPATT Oscillators. A report is also made on materials and fabrication techniques. The topics discussed are The Epitaxial Growth of Thin GaAs Layers Read Structures and Electric-Current-Controlled LPE Growth of GaAs.

Author(s):
Dalman, G. C. ; Eastman, L. F. ; Lee, C. A. ; Frey, J.
Author Organization(s):
CORNELL UNIV ITHACA N Y SCHOOL OF ELECTRICAL ENGINEERING
Descriptive Note:
Phase rept.,
Supplementary Note:
See also report dated Sep 75, AD-A016 947.
Pagination:
0237

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
RADC-TR-75-269
Contract/Grant Number(s):
F30602-74-C-0001
Task Number(s):
557303
Project Number(s):
AF-5573
Monitor Series:
TR-75-269
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*Microwave oscillators, *Solid state electronics, *Semiconductor devices, IMPATT diodes, Gunn diodes, Gallium arsenides, Field effect transistors, Microwave equipment, Epitaxial growth, TRAPATT devices, Semiconducting films, Microwave amplifiers
Field(s)/Group(s):
Electrical and Electronic Equipment, Solid State Physics
Keyword(s):
Transferred electron devices
Report Date:
1975 Nov 01