Subnanosecond Rise Time Injection Laser Pulses.

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Abstract:

The hybrid integration of an injection laser with a simple avalanche transistor modulator is shown to produce optical peak powers of several tens-of-watts magnitude and pulse rise times appreciably shorter than 1 nesec. In the central portion of the radiation pattern the pulse leading edge assumes the form of a spike having a displayed rise time of 120 psec. The pulse shape varies as a function of the direction of the radation relative to the plane of the emitting face. The delay between the firing of the avalanche transistor and the emission of the light pulse is less than 2 nsec. Author

Author(s):
Vanderwall, Jonathan ; Hattery, Walter V. ; Sztankay, Zoltan G.
Author Organization(s):
HARRY DIAMOND LABS ADELPHI MD
Descriptive Note:
Technical rept.,
Pagination:
0015

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
HDL-TR-1697
Task Number(s):
1W362201A20700
Project Number(s):
DA-1-W-362301-A-207, HDL-A22493
 Subject Terms
Communities of Interest:
Air Platforms
Descriptor(s):
*INJECTION LASERS, *PULSED LASERS, *TRANSISTORS, OPTICAL RADAR, RESOLUTION, INTEGRATED CIRCUITS, PULSE GENERATORS, LIGHT PULSES, RANGE FINDING, SPIKES, HYBRID CIRCUITS, AVALANCHE EFFECT(ELECTRONICS), RANGE GATING
Field(s)/Group(s):
Lasers and Masers, Active and Passive Radar Detection and Equipment, Solid State Physics
Keyword(s):
*Avalanche transistors, Rise time
Report Date:
1975 Mar 01