Investigations of Secondary Ion Mass Spectrometry.

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Abstract:

Research has been conducted on extending the utility of SIMS Secondary Ion Mass Spectrometry, analysis for oxide coatings on silicon. The effects of surface charging is mainly alleviated by combination of ion beam rastering and increased the energy filter range for the secondary ions. In ion implanted oxides the energy distribution of sputtered ions is broadened and shifted toward higher energies. A technique was developed for cooling specimens to -180C. At this temperature the mobility of Na ion in SiO2 is effectively reduced to allow measurement of depth profiles of Na in both as-grown oxide and in ion implanted oxide coatings. It was also demonstrated that Na ion micrographs can be taken of specimens at -180 C to show lateral distribution of the Na through the oxide.

Author(s):
Austin, A. E. ; Phillips, B. F.
Author Organization(s):
BATTELLE COLUMBUS LABS OHIO
Descriptive Note:
Final rept. 1 Jan-31 Dec 74,
Pagination:
0072

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-74-C-0266
Task Number(s):
D033
Project Number(s):
DNA-NWED-QAXT
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*SILICON DIOXIDE, *MASS SPECTROSCOPY, *SURFACES, EXPERIMENTAL DESIGN, ION BEAMS, SOLIDS, METAL OXIDE SEMICONDUCTORS, IMPURITIES, CHARGE TRANSFER, LABORATORY EQUIPMENT, ION BOMBARDMENT
Field(s)/Group(s):
Atomic and Molecular Physics and Spectroscopy, Solid State Physics
Keyword(s):
Secondary ion mass spectroscopy
Report Date:
1975 Jan 01