Integrated Optical Circuits

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Abstract:

A detailed study has been made of electroabsorption avalanche photodiodes EAP fabricated in high-purity n-type epitaxial GaAs, and the attenuation of high-purity planar GaAs waveguides has been examined at wavelengths close to the absorption edge. The results open up the attractive possibility of forming in high-purity GaAs waveguides detector as well as modulator elements based on the electroabsorption effect. The ability to selectively grow Hg1-xCdxTe on CdTe substrates by SiO2 masking has been demonstrated using the hydrogen-transport epitaxial technique. Detailed measurements have been made of mode propagation at 10.6 micrometers in nn CdTe planar waveguides formed by proton bombardment. Bragg-type acousto-optic modulators Rayleigh surface acoustic waves have been fabricated in such nn CdTe waveguides and a modulation efficiency for 10.6-micrometers light of 10 has been obtained at 27 MHz with about 0.5 W of acoustic power. Planar waveguides with propagation losses or 1.5cm 6.5 dBcm at 10.6-micrometers wavelength have been fabricated in the Pb1-xSnxTe alloy system for eventual use in integrated 10.6-micrometers heterodyne receivers.

Author(s):
Melngailis, Ivars
Author Organization(s):
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
Descriptive Note:
Semiannual technical summary rept. 1 Jan-30 Jun 1974
Supplementary Note:
See also report dated 31 Dec 1973, AD781102.
Pagination:
0031

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ESD-TR-75-103
Contract/Grant Number(s):
F19628-73-C-0002, ARPA ORDER-2074
Monitor Series:
TR-75-103, ESD
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.3_Planning
Modernization Areas:
Quantum Science and Computing; Directed Energy
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*INTEGRATED CIRCUITS, *OPTICAL EQUIPMENT, ACOUSTIC WAVES, EPITAXIAL GROWTH, SEMICONDUCTOR DEVICES, SEMICONDUCTORS, OPTICAL WAVEGUIDES, INFRARED LASERS, CADMIUM TELLURIDES, INFRARED DETECTORS, TELLURIDES, LEAD COMPOUNDS, ABSORPTION, MERCURY COMPOUNDS, SCHOTTKY BARRIER DEVICES, TIN COMPOUNDS, PHOTODIODES, CARBON DIOXIDE LASERS, ACOUSTOOPTICS, AVALANCHE DIODES, HETERODYNING, PROTON BOMBARDMENT, SURFACE WAVES
Field(s)/Group(s):
Line, Surface and Bulk Acoustic Wave Devices, Acoustooptic and Optoacoustic Devices, Infrared Detection and Detectors, Fiber Optics and Integrated Optics
Keyword(s):
*INTEGRATED OPTICS, OPTICAL MODULATORS, HETERODYNE DETECTION, ACOUSTIC SURFACE WAVES, TIN TELLURIDES, LEAD TELLURIDES, MERCURY TELLURIDES
Report Date:
1974 Jun 30