Admixtures in Germanium, Silicon and Gallium Arsenide (Recombination Characteristics),

This article reports on the recombining characteristics of admixtures in germanium, silicon and gallium arsenide. The nature and characteristics of energy levels donor or acceptor, ionization, etc. depend on the electron structure of admixture atoms and atom lattices and also on their position in the crystalline lattice of the semiconductor. The relationship of the dimensions of admixture atoms and the lattice is also important. The possibility of creating covalent bonds with atoms of the main lattice is of basic importance. Results of research in this area are presented.