Sputtered Thin Film Research

reportActive / Technical Report | Accession Number: ADA003005 | Open PDF

Abstract:

The reactive rf sputtering technique was applied to the preparation of a wide variety of materials. Single crystal films of ZnO, TiO2, WO3 AlN and GaN were grown on one or more of the insulating crystalline substrates of Al2O3, MgAl2O3, SiC and LiNbO3. Data on the deposition parameters, structure and optical waveguiding characteristics of the heteroepitaxial structures are presented. Reactive sputtering using sublimed arsenic as the sputtering gas inside a heated vacuum chamber was used to grow epitaxial films of GaAs. The controlled growth of single crystal alloys of Ga1-xAlxAs at low temperatures was also demonstrated. Structural, optical and electrical characteristics of these films are presented. Conditions were determined for the deposition of amorphous neodymium ultraphosphate films. Low loss optical wave guide structures were fabricated. Charge storage characteristics of MIS structures were investigated. These employed a composite insulator formed by sputtering 1000A of strontium titanate over a 20A thick thermally grown silicon dioxide layer on silicon.

Author(s):
Shuskus, A. J. ; Quinn, D. J. ; Paradis, E. L. ; Berak, J. M. ; Cullen, D. E.
Author Organization(s):
UNITED AIRCRAFT RESEARCH LABS EAST HARTFORD CT
Descriptive Note:
Semi-annual technical rept. no. 5, 15 Apr 1972-30 Sep 1974
Supplementary Note:
Sponsored in part by DARPA. See also AD0780277.
Pagination:
0214

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
UARL-N921337-15
Contract/Grant Number(s):
N00014-72-C-0415, ARPA ORDER-2173
Monitor Series:
ONR
 Subject Terms
Joint Capability Areas:
JCA_7.2.1_Mitigate Lethal Effects; JCA_7.2_Mitigate; JCA_7_Protection; JCA_5_Command and Control; JCA_5.3_Planning; JCA_4.5_Operational Contract Support; JCA_1.2.7_Experimentation; JCA_5.6.3_Assess Achievement of Objectives; JCA_5.6_Monitor; JCA_1.2.5_Lessons Learned; JCA_4.5.4_Requirements Definition; JCA_1.3.2_Personnel Management; JCA_4.5.1_Contract Support Integration; JCA_5.2.2_Develop Knowledge and Situational Awareness; JCA_5.2_Understand
Modernization Areas:
Microelectronics; Directed Energy
Communities of Interest:
Advanced Electronics
Descriptor(s):
*DIELECTRIC FILMS, *SEMICONDUCTING FILMS, *SPUTTERING, *THIN FILMS, ALUMINUM COMPOUNDS, AMORPHOUS MATERIALS, EPITAXIAL GROWTH, GALLIUM ARSENIDES, GALLIUM COMPOUNDS, LANTHANUM COMPOUNDS, LASER MATERIALS, LITHIUM COMPOUNDS, MAGNESIUM COMPOUNDS, NEODYMIUM COMPOUNDS, NIOBATES, NITRIDES, OPTICAL WAVEGUIDES, OXIDES, PHOSPHATES, SAPPHIRE, SILICON, SILICON CARBIDES, SILICON DIOXIDE, SINGLE CRYSTALS, SPINEL, STRONTIUM COMPOUNDS, SUBSTRATES, TITANATES, TITANIUM OXIDES, TUNGSTEN COMPOUNDS, ZINC COMPOUNDS
Field(s)/Group(s):
Electrical and Electronic Equipment, Manufacturing and Industrial Engineering and Control of Production Systems, Solid State Physics
Keyword(s):
ACOUSTIC SURFACE WAVES, REACTIVE SPUTTERING, NEODYMIUM PHOSPHATES, LANTHANUM PHOSPHATES, GALLIUM NITRIDES, ALUMINUM NITRIDES, ZINC OXIDES, TUNGSTEN OXIDES, LITHIUM NIOBATES, ALUMINUM ARSENIDES, METAL INSULATOR SEMICONDUCTORS, STRONTIUM TITANATES
Report Date:
1974 Nov 01