The Influence of Electron (1.5 MeV) and Proton (5 MeV) Irradiation on the Electrical, Optical, and Photoelectric Characteristics of Gallium Arsenide,

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Abstract:

The purpose of the present work is the study of the spectrum of radiation defects created by electrons 1.5 MeV and protons 5 MeV at temperatures close to 300K, their stability to annealing, and also the influence of an admixture of copper on the spectrum of the levels which develop after irradiation. For the investigation the authors used gallium arsenide of the n- and p-types of conductivity with a carrier concentration of 5 times ten to the 15th power to ten to the 18th powercc.

Author(s):
Krivov, M. A. ; Brudnyi, V. N.
Author Organization(s):
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Supplementary Note:
Edited trans. of Radiatsionnaya Fizika Nemetallicheskikh Kristallov Sbornik Statei (USSR) v3 p16-21 1971, by Charles T. Ostertag, Jr.
Annotation:
The Influence of Electron (1.5 MeV) and Proton (5 MeV) Irradiation on the Electrical, Optical, and Photoelectric Characteristics of Gallium Arsenide--Translation.
Pagination:
0011

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DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
FTD-HT-23-0037-75
 Subject Terms
Joint Capability Areas:
JCA_6.3.3_Spectrum Management
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*GALLIUM ARSENIDES, *RADIATION EFFECTS, USSR, OPTICAL PROPERTIES, ELECTRICAL PROPERTIES, CRYSTAL DEFECTS, COPPER, TRANSLATIONS, DOPING, ELECTRON IRRADIATION, PHOTOCONDUCTIVITY, PROTON BOMBARDMENT
Field(s)/Group(s):
Radioactivity, Radioactive Wastes and Fission Products, Solid State Physics
Report Date:
1974 Nov 18