Ceramic Sintering

reportActive / Technical Report | Accession Number: ADA001012 | Open PDF

Abstract:

Measurement of the rate of oxidation and creep rate in air of chemically vapor deposited Si3N4 at around 1500C are reported. Attempts to prepare pure, dense Si3N4 bodies by hot pressing powder at ultra-high pressures were unsuccessful. Resistance heaters made of dense, sintered SiC were tested and found to have in-use lifetimes very much longer than those of commercially available heaters tested in the same way. Microscopic examination of the structures developed during the initial stage sintering of SiC doped with C and B indicates that these dopants inhibit surface diffusion until densification begins at around 1500C. Bodies of B4C having about 94 of theoretical density were made by using conventional sintering processes and doping the powder with either SiC or Be4C.

Author(s):
Rosolowski, Joseph H. ; Greskovich, Charles D.
Author Organization(s):
GENERAL ELECTRIC CORPORATE RESEARCH AND DEVELOPMENT SCHENECTADY NY
Descriptive Note:
Semi-annual technical rept. 1 Apr-31 Oct 1974
Pagination:
0066

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
SRD-74-116
Contract/Grant Number(s):
N00014-74-C-0331, ARPA ORDER-2698
Monitor Series:
DARPA
 Subject Terms
Joint Capability Areas:
JCA_1.2.7_Experimentation; JCA_5_Command and Control; JCA_5.3_Planning; JCA_6.4.1_Secure Information Exchange; JCA_6_Net Centric; JCA_1.2.5_Lessons Learned; JCA_3.2_Engagement; JCA_3_Force Application
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*BORON CARBIDES, *SILICON CARBIDES, *SILICON NITRIDES, *SINTERING, ADDITIVES, BERYLLIUM COMPOUNDS, CREEP, ELECTRIC HEATERS, HIGH TEMPERATURE, HOT PRESSING, OXIDATION, VAPOR DEPOSITION
Field(s)/Group(s):
Ceramics, Refractories and Glass
Keyword(s):
Resistance heating, Beryllium carbides, Chemical vapor deposition
Report Date:
1974 Oct 01