Photo Emission from a Silicon P-N Junction.

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Abstract:

Light emitting diode technology can be applied to lightweight radar display equipment. Use of this technology requires an understanding of the diode types, light output, and current drain. Broad area silicon P-N junction diodes were operated under reverse biased conditions in the avalanche region. The light spots, or microplasms, that developed were observed and the relationship of the diode light intensity to the diode current was determined. Microplasm breakdown on the P-N junction during avalanche occurs at randomly positioned breakdown sites and the thresholds for microplasm ignition differ from site to site. The electric field required for microplasm appearance are greater than 120 kVcm. Author

Author(s):
Bertolini, Richard V.
Author Organization(s):
ARMY ELECTRONICS COMMAND FORT MONMOUTH N J
Descriptive Note:
Technical rept.,
Pagination:
0021

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ECOM-3380
Task Number(s):
1S662703A17503
Project Number(s):
DA-1-S-662703-A-175
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*SILICON, *LIGHT EMITTING DIODES, COMBAT SURVEILLANCE, DISPLAY SYSTEMS, RADAR EQUIPMENT, SEMICONDUCTOR JUNCTIONS
Field(s)/Group(s):
Electrooptical and Optoelectronic Devices, Active and Passive Radar Detection and Equipment, Solid State Physics
Report Date:
1970 Jan 01