Ga2O3 Schottky Rectifiers with 1 Ampere Forward Current, 650 V Reverse Breakdown and 26.5 MW. Cm(-2) Figure-of-Merit

A key goal for Ga2O3 rectifiers is to achieve high forward currents and high reverse breakdown voltages. Field-plated beta-Ga2O3 Schottky rectifiers with area 0.01 cm2, fabricated on 10 mu m thick, lightly-doped drift regions 1.33 x 1016 cm-3 on heavily-doped 3.6 x 1018 cm-3 substrates, exhibited forward current density of 100A. cm-2 at 2.1 V, with absolute current of 1 A at this voltage and a reverse breakdown voltage VB of 650V. The on-resistance RON was 1.58 x 10-2 Omega.cm2, producing a figure of merit V-B2R-ON of 26.5 MW.cm-2. The Schottky barrier height of the Ni was 1.04 eV, with an ideality factor of 1.02. The onoff ratio was in the range 3.3 x 106-5.7 x 109 for reverse biases between 5 and 100V. The reverse recovery time was similar to 30 ns for switching from 2V to -5V. The results show the capability of beta-Ga2O3 rectifiers to achieve exceptional performance in both forward and reverse bias conditions.