Broadband Measurements of the Refractive Indices of Bulk Gallium Nitride

reportActive / Technical Report | Accession Number: AD1070847 | Open PDF

Abstract:

New measurements of the index of refraction for free-standing samples of Gallium Nitride are reported. A simple dispersive prism technique is used to obtain the birefringent indices from 500 to 5100 nm, covering most of the transparency range of this wide band gap semiconductor. Millimeter thick samples prepared by both ammonothermal growth and hydride vapor phase epitaxy are found to have nearly identical refractive indices. The observed dispersion fits well to a two-pole Sellmeier equation with an estimated overall accuracy of - 0.002. Our results are found to be in good agreement with previous visible and near-IR measurements on thin-film GaN samples, however we observed significantly less dispersion in the mid-IR. Moderate heating of the samples also provided a new determination of dndT.

Author(s):
Bowman, Steven R. ; Brown, Christopher G ; Brindza, Michael ; Beadie, Guy ; Hite, Jennifer K ; Freitas, Jaime ; Eddy, Charles R ; Meyer, Jerry ; Vurgaftman, Igor
Author Organization(s):
US Naval Research Laboratory Washington United States
Descriptive Note:
Journal Article - Open Access
Supplementary Note:
Optical Materials Express , 4, 7, 01 Jan 0001, 01 Jan 0001,
Pagination:
0010

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release;

RECORD

Collection: TR
Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
optical properties, nonlinear optics, gallium nitrides, single crystals, bandpass filters, optical materials, optics, lasers, birefringence, dispersions, broadband, refractive index, WIDE BANDGAP SEMICONDUCTORS, thin films, OPTOELECTRONIC DEVICES
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
Semiconductor materials
Report Date:
2014 Jun 02
Creation Date:
2019 Apr 18