LOC GaAlAs Laser Development.

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Abstract:

LOC lasers for the wavelength of 8800 were fabricated by GA sub 1-xAl sub x As. solution epitaxy. The emission beam angle was varied between 21 and 80 degrees by varying the optical index changes at the n-side cavity boundary. Output power data are presented for the temperature range of 25 to 70 C. External slope efficiencies in excess of 1 wattA, and optical power densities greater than 4 wattmil of facet width, were observed at room temperature. Author

Author(s):
Carr, David L. ; Doerbeck, Friedrich H.
Author Organization(s):
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR GROUP
Descriptive Note:
Final rept. 17 Apr-31 Dec 72,
Pagination:
0034

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TI-03-73-31
Contract/Grant Number(s):
DAAK02-72-C-0269
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*LASERS, MANUFACTURING), OPTICS, EPITAXIAL GROWTH, GALLIUM ARSENIDES, ALUMINUM, TEMPERATURE, DENSITY, PHOTONS, SUBSTRATES, DOPING, GALLIUM ALLOYS, ALUMINUM ALLOYS, ARSENIDES, THICKNESS, POWER, EFFICIENCY
Field(s)/Group(s):
Lasers and Masers
Keyword(s):
CURRENT DENSITY, LARGE OPTICAL CAVITY, LASERS, SEMICONDUCTOR DIODES, LASER CAVITIES, REPRODUCIBILITY
Report Date:
1973 Jul 01