Broadband Near Infrared Laser Detector.

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Abstract:

Proper theoretical treatment of the transmission mode photocathode is shown to require a correct treatment both of the interfacial recombination velocity and of electron-hole pair generation in the grading region. The rate of change of lattice constant with respect to bandgap is shown to be the determining factor in obtaining a low interfacial recombination velocity. These calculations show from first principles that no better performance can ever be obtained from GaAsGaAsPGaP photocathodes than that which has been obtained experimentally already. Cooled operation of zinc-doped InGaAsP quaternary III-V photocathodes shows superior properties to either InGaAsP room temperature operation or InAsP ternary photocathodes low temperature operation. The barrier height at the InGaAsP-Cs2O interface is lowered by cooling, giving increased electron escape probability and new highs in quantum efficiency over a wide wavelength range. A 1.06-micron quantum efficiency of 7.5 per incident photon was observed at -90 C. Author

Author(s):
James, Lawrence W.
Author Organization(s):
VARIAN ASSOCIATES INC PALO ALTO CA
Descriptive Note:
Quarterly rept. no. 4, Oct-Dec 72,
Pagination:
0045

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
DAAK02-71-C-0301
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*INFRARED DETECTORS, *LASERS, *PHOTOCATHODES, *INFRARED LASERS, INFRARED DETECTORS, BROADBAND, GALLIUM ARSENIDES, PHOSPHIDES, ZINC, DOPING, COOLING, CHARGE CARRIERS, INTERFACES, ELECTRONS, SILICON DIOXIDE, EPITAXIAL GROWTH
Field(s)/Group(s):
Electrical and Electronic Equipment, Lasers and Masers, Infrared Detection and Detectors
Keyword(s):
GROUP 3 ELEMENTS, GROUP 5 ELEMENTS, EPITAXIAL GROWTH, LIQUID PHASES, NEAR INFRARED REGION, EPITAXIAL GROWTH, VAPOR PHASES
Report Date:
1973 Jan 01