10.6 Micron Photodetector.

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Abstract:

The report is on PbSnTe homo- and heterojunction photodiodes which are sensitive to the 8-14 microns portion of the IR spectrum and operable above 77 K. The results cover three main areas 1 Single element 10.6 microns photodiodes with frequency response in excess of 1 GHz for laser radar and communication systems 2 Low frequency-high D arrays 3 Dielectric constant measurements in the depletion region of p-n diodes to determine the upper limit on the frequency response of PbSnTe detectors.

Author(s):
Longo, Joseph T. ; Andrews, A. Michael
Author Organization(s):
ROCKWELL INTERNATIONAL THOUSAND OAKS CA SCIENCE CENTER
Descriptive Note:
Final rept. 25 Nov 70-28 Feb 73,
Pagination:
0124

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
SC505.28FR, AFAL-TR-73-87
Contract/Grant Number(s):
F33615-71-C-1122
Monitor Series:
TR-73-87
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*PHOTODIODES), (*INFRARED DETECTORS, SEMICONDUCTORS, LEAD ALLOYS, TIN ALLOYS, TELLURIDES, GAS LASERS, OPTICAL RADAR, DOPPLER SYSTEMS, OPTICAL COMMUNICATIONS, INFRARED LASERS, ILLUMINATION
Field(s)/Group(s):
Electrical and Electronic Equipment, Infrared Detection and Detectors, Solid State Physics
Keyword(s):
FAR INFRARED REGION, GROUP 4 ELEMENTS, GROUP 6 ELEMENTS
Report Date:
1973 Apr 01