Complementary Broadband Power Amplifier, 225 to 400 Megahertz.

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Abstract:

Twelve UHF high-power-amplifier modules were developed, utilizing thin-film hybrid integrated circuit technology and a modular building approach. Several functional, integrated, power-amplifier stages were cascaded and paralleled, utilizing 3-dB quadrature couplers to achieve the high power gain and output power. The power amplifiers were designed to operate over the 225- to 400-megahertz frequency range and provide a power output of 40 t0 50 watts of CW power. Each functional, integrated, power-amplifier stage utilized thin-film inductors, capacitors, resistors and transistor pellets mounted on a single 350-mil-square BeO substrate. These components were ultrasonically wire-bonded together forming a hybrid integrated circuit. The power amplifier stages were designed for direct insertion into a 50-ohm transmission line. The UHF power amplifier modules were designed specifically for amplitude-modulation systems where 40 to 50 watts fo peak power are required 10-watt carrier level. Author

Author(s):
Minton, Robert
Author Organization(s):
RCA SOLID STATE DIV SOMERVILLE NJ
Descriptive Note:
Final technical rept. 13 May 70-30 May 72,
Pagination:
0084

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFAL-TR-72-414
Contract/Grant Number(s):
F33615-70-C-1572
Monitor Series:
TR-72-414
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
(*POWER AMPLIFIERS, BROADBAND), ULTRAHIGH FREQUENCY, INTEGRATED CIRCUITS, GAIN, TRANSISTOR AMPLIFIERS, TRANSMISSION LINES, TRANSISTORS, CAPACITORS, RESISTORS, SUBSTRATES, PUSH PULL AMPLIFIERS, BERYLLIUM OXIDES, AMPLITUDE MODULATION
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
COMPLEMENTARY SYMMETRY, COMPLEMENTARY CIRCUITS, POWER SUMMATION TECHNIQUE, QUADRATURE COUPLERS, THIN FILMS
Report Date:
1972 Dec 01