Development of Indium Arsenide and Indium Antimonide Surface Barrier Photodiodes.

The program is concerned with the development of high performance indium arsenide and indium antimonide photodetectors with enhanced sensitivity and increased bandwidth, applicable to infrared laser radiation detection and infrared image sensing. Experimental work reported herein is concentrated on the development of techniques for fabricating metal semi-conductor structures with high efficiency photo junctions. Schottky barrier mechanisms are being exploited towards improved quantum efficiency and reduced excess noise and leakage. This final report describes processing techniques employed for the preparation of photo responsive junctions on p-type indium arsenide and p-type indium antimonide materials. N-type InAs and n-type InSb were found to be incapable of producing a metal semi-conductor junction with any of the techniques typically employed for such fabrication. This report also describes the results of detailed testing carried out on the metal semi-conductor photodiodes fabricated during the contract. Author