Development of Microwave Semiconductor Noise Diode and Diode Holder.

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Abstract:

A diode holder was designed that should allow converage of the frequency band from 2 GHz to 12.4 GHz. Furthermore, the work has involved the fabrication and testing of a semiconductor noise diode. Test results are given for noise power measurements between 2 and 4 GHz and between 8.5 and 12 GHz. Author

Author(s):
Noisten, J. ; Collinet, J. C.
Author Organization(s):
MICROWAVE ASSOCIATES INC BURLINGTON MA
Descriptive Note:
Quarterly rept. no. 2, 17 Jul-16 Oct 69,
Supplementary Note:
See also Quarterly rept. no. 1, AD-858 186.
Pagination:
0029

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00039-69-C-1573
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
(*NOISE GENERATORS, MICROWAVE FREQUENCY), (*AVALANCHE DIODES, RADIOFREQUENCY POWER), MICROWAVE EQUIPMENT, NOISE(RADIO), SENSITIVITY, S BAND, C BAND, X BAND, K BAND
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
MOUNTINGS, SEMICONDUCTOR JUNCTIONS
Report Date:
1970 Jan 01