Microwave Solid-State Device Studies.

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Abstract:

The objectives are to investigate theoretically and experimentally new solid-state phenomena and techniques having application to microwave generation, amplification and control. Current tasks under the program are a Microwave noise emission from indium antimonide A method of estimating mobility from the transverse magnetoresistance characteristics is included in report b Instabilities in germanium c Transverse and magnetic field effects on instabilities in bulk semiconductors d Gunn-effect oscillators and frequency converters Includes a large-signal analysis of quenched-domain mode of Gunn-effect devices e Gunn-effect devices f High-power Gunn-effect devices g Avalanche-diode devices h High-power avalanche diodes i High-efficiency avalanche diodes j Solid-state device construction. Author

Author(s):
Haddad, G. I.
Author Organization(s):
MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
Descriptive Note:
Quarterly progress rept. no. 8, 1 Jun-1 Sep 69,
Supplementary Note:
See also Quarterly progress rept. no. 7, AD-860 714.
Pagination:
0129

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
01094-8, RADC-TR-69-381
Contract/Grant Number(s):
F30602-68-C-0043
Task Number(s):
557303
Project Number(s):
AF-5573
Monitor Series:
TR-69-381
 Subject Terms
Modernization Areas:
Directed Energy
Communities of Interest:
Energy and Power Technologies
Descriptor(s):
*SEMICONDUCTOR DEVICES), (*MICROWAVE EQUIPMENT, MICROWAVE OSCILLATORS, INDIUM ANTIMONIDES, GERMANIUM, AVALANCHE DIODES, PLASMAS(PHYSICS), STABILITY, SEMICONDUCTORS, MICROWAVE AMPLIFIERS, FREQUENCY CONVERTERS
Field(s)/Group(s):
Electrical and Electronic Equipment, Solid State Physics
Keyword(s):
GUNN DIODES, GUNN EFFECT, SOLID STATE PLASMAS
Report Date:
1969 Nov 01