Development of Microwave Semiconductor Noise Diode and Diode Holder.

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Abstract:

An expression of the output noise level above thermal noise for avalanche diodes is derived, and results are calculated for diodes with different transit angles. The calculations are in part confirmed by measurements of several diodes. Author

Author(s):
Noisten, John
Author Organization(s):
MICROWAVE ASSOCIATES INC BURLINGTON MA
Descriptive Note:
Quarterly rept. no. 1, 16 Apr-16 Jul 69,
Pagination:
0026

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00039-69-C-1573
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*NOISE GENERATORS, MICROWAVE FREQUENCY), (*AVALANCHE DIODES, RADIOFREQUENCY POWER), MICROWAVE EQUIPMENT, COAXIAL CABLES, NOISE(RADIO), SENSITIVITY, S BAND, C BAND, X BAND, K BAND
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
MOUNTINGS, SEMICONDUCTOR JUNCTIONS
Report Date:
1969 Aug 29