Factors Influencing the Temperature Dependence of Lasing Threshold Current Density.

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Abstract:

Conditions relating to the threshold for laser action in GaAs injection diodes are examined. Equations which can be employed as experimental checks on theory are derived. The theory of band-to-band Auger recombination is considered, and its implications as to the behavior of the nonradiative lifetime for injected electrons in diodes under study in this laboratory are discussed. Areas where existing data are incomplete are pointed out, and some insight as to how these data should be analyzed is obtained. Author

Author(s):
Smith, J. Lynn
Author Organization(s):
ARMY MISSILE RESEARCH DEVELOPMENT AND ENGINEERING LAB REDSTONE ARSENAL AL PHY SICAL SCIENCES DIRECTORATE
Descriptive Note:
Technical rept.,
Pagination:
0021

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
RR-TR-69-10
Task Number(s):
1T061102B31A03
Project Number(s):
DA-1-T-061102-B-31-A
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*LASERS, GALLIUM ARSENIDES, TEMPERATURE, ELECTRIC CURRENT, INJECTION, BAND THEORY OF SOLIDS, RECOMBINATION REACTIONS
Field(s)/Group(s):
Lasers and Masers
Keyword(s):
GALLIUM ARSENIDES, LASERS
Report Date:
1969 Jun 16