Transport Equations for Electrons in Two-Valley Semiconductors.

reportActive / Technical Report | Accession Number: AD0855137 | Need Help?

Abstract:

Transport equations are derived for particles, momentum and energy of electrons in a semiconductor with two distinct valleys in the conduction band, such as GaAs. Care is taken to state and discuss the assumptions which are made in the derivation. The collision processes are expressed in terms of relaxation times. The accuracy is improved by considering these to depend on the average kinetic energy rather than the electron temperature. Other transport equations used in the literature are discussed, and shown to be incomplete and inaccurate in many cases. Author

Author(s):
Blotekjaer, Kjell
Author Organization(s):
NORGES TEKNISKE HOEGSKOLE TRONDHEIM DIV OF PHYSICAL ELECTRONICS
Descriptive Note:
Technical rept.,
Pagination:
0033

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
Scientific-1, AE-9
Contract/Grant Number(s):
F61052-69-C-0005
Task Number(s):
557303
Project Number(s):
AF-5573
Monitor Series:
TR-69-236
 Subject Terms
Joint Capability Areas:
JCA_3.2_Engagement; JCA_3_Force Application; JCA_3.2.1_Kinetic Means
Communities of Interest:
Materials and Manufacturing Processes
Descriptor(s):
*MICROWAVE OSCILLATORS, *ELECTRONS, BAND THEORY OF SOLIDS, TRANSPORT PROPERTIES, CHARGE CARRIERS, GALLIUM ARSENIDES, DISTRIBUTION FUNCTIONS, NORWAY
Field(s)/Group(s):
Solid State Physics
Keyword(s):
BOLTZMANN EQUATION, EFFECTIVE MASS, *GUNN EFFECT, TRANSPORT EQUATIONS
Report Date:
1969 Feb 01