Vacuum-Evaporated, Single-Crystal Silicon Film on a Sapphire Substrate,

The authors induced the epitaxial growth of single-crystal silicon films on optically flat, polished sapphire substrates. They have determined the nature of the relationship between deposition parameters substrate temperature, rate of deposition, residual gas pressure and the characteristics of the developed film. They have demonstrated that a thin film which is deposited on a substrate at a temperature of 800 degrees C in a vacuum of at least .000001 pressure and has a growth rate of approximately 10 As, is suitable for use in the production of various semiconductor devices.