TRANSISTOR, HF, SILICON, POWER, LINEAR (300 W PEP, 30 MHZ).

The purpose is to develop a 300 Watt 30 MHz transistor. Specifications include a maximum current capability of 100 A, and thermal resistance of .32C per watt. Objectives require the development of new technologies rather than extensions of existing technologies. The following technologies will be developed 1 deposited emitter resistors, 2 metal-oxide-metal transistor structures, 3 cell selection techniques to improve yield on large area devices, 4 thermal symmetry of the device, 5 heat removal from both sides of the package, 6 integrated protection circuitry to prevent device degradation. Items include 60 transistors producing 300 W at 30 MHz with 10 db gain and 20 500 watt transistors made with multiple chips. Author