TRANSISTOR, FIELD-EFFECT, HF, SILICON, POWER, LINEAR, 10-MEGAHERTZ, 5-WATT-PEP.

A MOS RF power transistor was developed. The transistor exhibited CW output power of up to 14 watts at 10 megahertz. Median performance values with 5 watts at 18 megahertz were as follows power gain of 16 dB efficiency of 40 percent and IMD of -35 dB when operating Class B. Best transistors considerably surpassed contract objective goals. The objective breakdown voltage of 75 volts was met by more than half of the transistors tested. This value of breakdown voltage was attained by using a lightly doped drain edge that abuts the channel and a thick oxide that covers the drain edge. The excellent IMD performance resulted from a square-to-near linear transfer curve with a gradual cut-off. All seventy-two final transistors delivered were capable of at least 5 watt, 10 MHz operation. Author