SEMICONDUCTOR LASER MODULATION TECHNIQUES.

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Abstract:

The report summarizes results for the entire program. The program involved theoretical and experimental analysis to identify the attributes and limitations of semiconductor modulation techniques. Important factors considered were bandwidth, efficiency, noise and distortion. A breadboard model was built utilizing a lead-zirconate-titanate ceramic piezoelectric modulator packaged with a GaAs laser diode in a good thermal lasermodulator unit. A linear wavelength shift of 0.001 Angstroms per volt of modulator voltage was obtained at 77K and 4.2K. A maximum shift in excess of 0.1 Angstrom was measured. The modulator represents a capacitive load of about 500 picofarads. An optical discriminator measurement technique used was capable of detecting frequency shifts of a few MHz. The significance of multimode laser operation is discussed. Author

Author(s):
Mallory, William
Author Organization(s):
GENERAL ELECTRIC CO SYRACUSE NY ELECTRONICS LAB
Descriptive Note:
Final rept. 31 Jan-31 Jul 67,
Pagination:
0087

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
RADC-TR-67-569
Contract/Grant Number(s):
AF 30(602)-4199
Task Number(s):
652701
Project Number(s):
AF-6527
Monitor Series:
TR-67-569
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*MODULATION), (*LASERS, (*SEMICONDUCTORS, LASERS), (*LASERS, OPTICAL RADAR), FREQUENCY SHIFT, MAGNETOOPTICS, ELECTROOPTICS, PRESSURE, SEMICONDUCTOR DIODES, MODULATORS, CRYOGENICS, PIEZOELECTRIC TRANSDUCERS, GALLIUM ARSENIDES
Field(s)/Group(s):
Lasers and Masers, Optical Detection and Detectors
Report Date:
1967 Dec 01