RESONANT FREQUENCY VARIATION IN A RESONANT GATE TRANSISTOR AS A FUNCTION OF TEMPERATURE AND POLARIZATION VOLTAGE.

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Abstract:

A method of solving for the displacement and actual resonant frequency of a nonlinearly electrostatically loaded contilever beam is obtained. The method is written into a program for an IBM 1620 Computer. Output data from the program is used in another program written to characterize the resonant frequency of a Resonant Gate Transistor RGT versus polarization voltage and temperature. The coefficient of temperature for Youngs Modulus for Gold is shown to vary at a rate dependent on the stress. An explicit expression is derived for the rate of polarization voltage compensation needed to maintain a constant frequency for the RGT with varying temperatures. Author

Author(s):
Deschaines, Carroll Edward
Author Organization(s):
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
Descriptive Note:
Master's thesis,
Pagination:
0153

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
GE/EE/67S-2
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*TRANSISTORS, RESONANT FREQUENCY), TUNED CIRCUITS, RESONANCE, GATES(CIRCUITS), STABILITY, INTEGRATED CIRCUITS, MOLECULAR ELECTRONICS, TEMPERATURE, POLARIZATION, BEAMS(STRUCTURAL), THESES, COMPUTER PROGRAMS
Field(s)/Group(s):
Electrical and Electronic Equipment, Computer Programming and Software
Keyword(s):
IBM 1620 COMPUTERS, RESONANT GATE TRANSISTORS
Report Date:
1967 Sep 01