MICROWAVE TRANSISTORS.

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Abstract:

This report describes advances in NPN planar-germanium transistor development for S and C band. Silicon nitride has been found to effectively mask both gallium and indium. Low-temperature sputtered films are being investigated. The Mo-Au contact system is now being used on the shallow-diffused germanium devices to reduce emitter base shorts resulting from use of aluminum expanded contacts. Detailed inductance measurements were made on the TI C-band and the miniature coaxial package. The double slide-screw transistor tester has been found to work very satisfactorily for noise and gain measurements up to 8 GHz. A new f sub t measuring set with operating frequency of 1 GHz has been constructed. A new method for noise characterization of microwave devices in terms of parameters invariant under lossless transformations has been developed. Breadboard work on the 1.7-2.4 GHz amplifier has been completed. Mask drawings for the S- and C-band oscillators and the S-band amplifier have been completed. Ceramic C-band balanced mixer NF performance shows 7.5 dB from 5.0 to 6.3 GHz. Characterization of the titanium dioxide substrate material has resulted in curves of Zo, loss, and slowing factor.

Author(s):
Johnson, George ; Boone, David ; Lange, Julius ; Moore, Jerry ; Teague, Clayton
Author Organization(s):
TEXAS INSTRUMENTS INC DALLAS SEMICONDUCTOR-COMPONENTS DIV
Descriptive Note:
Quarterly rept. no. 6, 1 Sep-30 Nov 66,
Pagination:
0073

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
TI-03-66-140, ECOM-01371-6
Contract/Grant Number(s):
DA-28-043-AMC-01371(E)
Task Number(s):
1E622001A05604
Project Number(s):
DA-1E6-22001-A-056
Monitor Series:
01371-6
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
(*TRANSISTORS, GERMANIUM), MICROWAVE OSCILLATORS, S BAND, TITANIUM COMPOUNDS, MICROWAVE FREQUENCY, DOPING, GALLIUM, INDIUM, MASKING, SILICON COMPOUNDS, NITRIDES, FIXED CONTACTS, MIXERS(ELECTRONICS), SUBSTRATES, DIFFUSION, DIOXIDES, MOLYBDENUM, GOLD, PACKAGING, INDUCTANCE, TEST EQUIPMENT, TEST METHODS, NOISE(RADIO), TRANSISTOR AMPLIFIERS, MICROWAVE AMPLIFIERS, C BAND
Field(s)/Group(s):
Electrical and Electronic Equipment
Report Date:
1967 Apr 01