EVALUATION OF THE PSIN DEVICE.

This report summarizes the evaluation of the theory, technology, device properties, and applications of the gallium arsenide PSIN diode. Significant advances were made in the development of fabrication processes to provide reproducible device characteristics, high device yields, and matrix arrays. A phenomenological model for the pre-breakdown behavior of the device was proposed the extension of a filamentary current model to this device has also been proposed. Specifically, it has been observed that both a linear and a square-law region of the dependence of current on the potential drop across and semi-insulating region are present. Also, in the post-breakdown region, infrared emission peaking at 8820 A is observed through the p-region. This radiation takes the form of a circular area that grows in diameter as the current is increased. These phenomena are discussed and correlated with theoretical predictions. It was also determined that the potential drop across the device in the post-breakdown region is proportional to the square of the thickness of the semi-insulating region. Switching times, the device equivalent circuit, and other circuit considerations are discussed. A number of significant applications are presented.