DEVELOPMENT OF MANUFACTURING METHODS FOR FIELD-EFFECT DEVICES.

This is the final report of a 14-month, four-phase program to develop manufacturing methods, process controls, and reproducible performance characteristics of a general purpose, metal-oxide-semiconductor MOS field-effect transistor FET. The phases were 1 Device Design, 2 Pilot Line Development, 3 Pilot Line Production Reliability, and 4 Reliability Testing. Two MOS-FET devices were applied to the program one was a low-power, n-channel transistor suitable for operation in the depletion mode over a wide frequency range, with high gain and low noise the other was a p-channel enhancement-mode device for use in chopper or amplifier application and as a multiplexer or commutator switch. The devices were designed and produced initially at the Fairchild Semiconductor Research and Development Laboratory where preliminary data indicated that the devices were highly stable and reliable for the specified parameters. Device production was transferred to the transistor manufacturing plant where a representative pilot line was established. A thorough reliability study was conducted on the n-channel device, accumulating over 300,000 life-test hours during the term of the program. Few major problems were encountered, and the program was successfully completed in substantial conformance with program goals. Author