Formation of Subnanosecond Fronts of Pulses by Switches Based on Chalcogenide Glasses,

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Abstract:

Formation of nanosecond pulse fronts using sandwich type chalcogenide vitreous semiconductor diodes of compositions Te-Si, Te-As-Si, Te-As-Si-Ge, was investigated. A thyratron, giving a primary pulse length of 0.3 microsec with a front length of about 40 nsec, was used as the primary pulse generator. Oscillograms demonstrated an output pulse front length of not over 1-2 nsec.

Author(s):
Privalov, V. N. ; Shvets, G. A. ; Shkut, V. A.
Author Organization(s):
ARMY FOREIGN SCIENCE AND TECHNOLOGY CENTER CHARLOTTESVILLE VA
Supplementary Note:
Trans. of Izvestiya Vysshikh Uchebnykh Zavedenii. Radioelektronika (USSR) v15 n12 p1515-1516 1972.
Annotation:
Formation of Subnanosecond Fronts of Pulses by Switches Based on Chalcogenide Glasses--Translation.
Pagination:
0005

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
FSTC-HT-23-1777-73
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*Semiconductors, Chalcogens, Switches, Amorphous materials, Pulses, Thyratrons, Tellurium alloys, Germanium alloys, Silicon alloys, Arsenic alloys, Translations, USSR
Field(s)/Group(s):
Electrical and Electronic Equipment, Solid State Physics
Keyword(s):
Amorphous semiconductors, Ovonic switches
Report Date:
1974 Jan 16