High Density Memory.

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Abstract:

A study was made of programmable non-volatile metal nitride oxide silicon MNOS memory. The work included Setting up of MNOS processing evaluation and characterization of MNOS devices design of memory integrated circuits and, fabrication of memory integrated circuits.

Author(s):
Lin, H. C. ; Chawla, A. S.
Author Organization(s):
MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING
Descriptive Note:
Final rept. Apr 72-Dec 73,
Pagination:
0069

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Contract/Grant Number(s):
N00014-67-A-0239-0022
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*Memory devices, High density, Transistors, Metals, Nitrides, Oxides, Silicon, Capacitors, Integrated circuits, Fabrication, Read write memories, Semiconductor devices
Field(s)/Group(s):
Computer Hardware
Keyword(s):
*Semiconductor computer storage, Design
Report Date:
1973 Jan 01