EBS Diode Arrays.

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Abstract:

S, Silicon, Fabrication, Specifications, Electrical properties, Gain, PassivityDesignThe objective of this study was to determine methods of fabricating an array of fifth silicon diodes for application in an electron beam semiconductor EBS device. Lateral dimensions of the diode array specified in the procurement specification were necessary requirements. The diode arrays were processed with poly silicon and aluminum as well as phosphorous glass passivating layers. An evaluation of the stability of the diode reverse characteristics under electron bombardment was made. Measurements of electron gain and pulse response were performed. Several 50 element diode arrays were fabricated, tested and evaluated. Recommendations for making electrical connections to the diode arrays were made. Modified author abstract

Author(s):
Schuegraf, K. K.
Author Organization(s):
NORTHROP RESEARCH AND TECHNOLOGY CENTER HAWTHORNE CALIF
Descriptive Note:
Final rept.,
Supplementary Note:
See also report dated May 73, AD-760 602.
Pagination:
0051

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
NRTC-73-45R, ECOM-0086-F-73
Contract/Grant Number(s):
DAAB07-73-C-0086
Task Number(s):
1S662705A4400
Project Number(s):
DA-1-S-662705-A-44
Monitor Series:
0086-F-73
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*Electron tube targets, *Semiconductor diodes, Silicon, Fabrication, Specifications, Electrical properties, Gain, Passivity
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
Design
Report Date:
1974 Jan 01