GaAs Large Optical Cavity (LOC) Laser Diode for Communications Systems.

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Abstract:

T EMITTING DIODES, Communication equipment, Epitaxial growth, PerformanceEngineeringDesignWork has been initiated on the development of an LOC laser diode to be used as the transmitting component for an optical communicator. During this first six month period, a package has been designed which meets the device requirements of low thermal resistance and low self inductance. A liquid phase epitaxial process has been developed to produce the multipler layer structures required to form the LOC lasing p-n junctions. Results of four layer structures are tabulated. Cross sections of typical layers are shown as photographed with a scanning electron microscope. Operating devices were constructed in which lasing was achieved at pulse repetition rates of 2.0MHz and a duty cycle of 4. Plans for effort in future intervals are given. Author

Author(s):
O'brien, J. T.
Author Organization(s):
RCA ELECTRONIC COMPONENTS LANCASTER PA ELECTRO-OPTICS PRODUCTS
Descriptive Note:
Interim technical rept. no. 1, 15 Nov 72-15 May 73,
Pagination:
0051

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ECOM-0062-1-73
Contract/Grant Number(s):
DAAB07-73-C-0062
Monitor Series:
0062-1-73
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*SEMICONDUCTOR DIODES, *GALLIUM ARSENIDE LASERS, LIGHT EMITTING DIODES, EPITAXIAL GROWTH, PERFORMANCE(ENGINEERING)
Field(s)/Group(s):
Lasers and Masers, Electrooptical and Optoelectronic Devices
Keyword(s):
Design
Report Date:
1973 Sep 01