Reliability of High Field Semiconductor Devices.

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Abstract:

D Semiconductor Devices.Semi-annual rept. no. 2, 1 Apr 72-1 Apr 73,2Ramachandran,T. B. Heaton,J. L. DAAB07-72-C-0101ECOM0101-72-2Gunn diodes, Semiconductor diodes, ReliabilityElectronics, Gunn effect, Microwave oscillators, Gallium arsenides, Silicon, Transient radiation effects, FailureIMPATT diodesThe interim report describes the results of a continuing program of investigation concerning the reliability and failure modes of gallium arsenide Gunn and IMPATT diodes, and silicon IMPATT diodes. Data is presented concerning the burn-out distribuiton in time of Gunn diodes. Also, the changes in dc and RF parameters of 700 Gunn and 100 gallium arsenide IMPATT diodes resulting from 24 to 168 hours of dc high temperature burn-in are present. Modified author abstract

Author(s):
Ramachandran, T. B. ; Heaton, J. L.
Author Organization(s):
MICROWAVE ASSOCIATES INC BURLINGTON MASS
Descriptive Note:
Semi-annual rept. no. 2, 1 Apr 72-1 Apr 73,
Pagination:
0097

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ECOM-0101-72-2
Contract/Grant Number(s):
DAAB07-72-C-0101
Monitor Series:
0101-72-2
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*Gunn diodes, *Semiconductor diodes, Reliability(Electronics), Gunn effect, Microwave oscillators, Gallium arsenides, Silicon, Transient radiation effects, Failure
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
IMPATT diodes
Report Date:
1973 Nov 01