Reliability of High Field Semiconductor Devices.

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Abstract:

07-72-C-0101DA-1-S-662705-A-0561-S-662705-A-05601ECOM0101-72-Isemiconductor diodes, reliabilityelectronics, microwave oscillators, gallium arsenides, silicon, transients, failureelectronics, test methods, test equipmentgunn diodes, impatt diodes, transient radiation effectselectronicsThe report describes the results of a continuing program of investigation concerning the reliability and failure modes of gallium arsenide Gunn, and IMPATT diodes and silicon IMPATT diodes. Data is presented concerning the burn-out distribution in time and parameter change of 553 Gunn diodes placed on high temperature dc burn-in. The results of Gunn diode switching transient reliability tests and long term dc burn-in data are also reported. Temperature measurement data on operating gallium arsenide Gunn and IMPATT diodes obtained using an infrared radiometer are presented. Author

Author(s):
Heaton, John L. ; Ramachandran, T. B.
Author Organization(s):
MICROWAVE ASSOCIATES INC BURLINGTON MASS
Descriptive Note:
Interim rept. 1 Apr-30 Sep 72,
Pagination:
0095

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
ECOM-0101-72-I
Contract/Grant Number(s):
DAAB07-72-C-0101
Task Number(s):
1S662705A05601
Project Number(s):
DA-1-S-662705-A-056
Monitor Series:
0101-72-I
 Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
(*SEMICONDUCTOR DIODES, RELIABILITY(ELECTRONICS)), MICROWAVE OSCILLATORS, GALLIUM ARSENIDES, SILICON, TRANSIENTS, FAILURE(ELECTRONICS), TEST METHODS, TEST EQUIPMENT
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
GUNN DIODES, IMPATT DIODES, TRANSIENT RADIATION EFFECTS(ELECTRONICS)
Report Date:
1973 Jul 01