Integrated Optics

Films of optical quality suitable for waveguide and optical device elements have been designed and growth processes developed for producing such films. Films with various compositions and thicknesses have been prepared by chemically depositing GaAs and Ga1-xAlxAs upon GaAlAs and GaAs. Film thicknesses from 2 to 17 micrometers and compositions from x 0.02 to x 0.25 Ga1-xAlxAs were obtained. Techniques for determining the Ga-to-Al ratio have been developed i.e., photoluminescent determination of bandgap and electron microprobe analysis as controls for meeting the design parameters. Device structures consisting of channel guides and directional couplers have been developed in GaAs using ion machining techniques.