Study of PbTe, PbSnTe, PbSe, PbSnSe, and Ge Metal Insulator Semiconductor (MIS) Structures.

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Abstract:

A thorough understanding and a well developed fabrication procedure of MIS structures are the prerequisite for charged coupled device applications. The object of this thesis is to study the narrow gap semiconductor MIS and investigate its feasibility for IR-charge coupled images applications. Two MIS studies were made. First, MIS of five lead-tin semiconductors were fabricated using E-gun evaporated 100-450A thick Al2O3 or SiO2 layers as insulators. Second, MIS of 0.05ohm-cm p-type and 40ohm-cm n-type Ge were also studied. In addition, effects of electron bombardment simulating the space environment around Jupiter on a n-channel depletion MOSFET were studied. Modified author abstract

Author(s):
Kost, Lawrence Michael
Author Organization(s):
NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF
Descriptive Note:
Master's thesis,
Pagination:
0173

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*SEMICONDUCTOR DEVICES, ELECTRICAL PROPERTIES), (*INFRARED DETECTORS, FEASIBILITY STUDIES), LEAD COMPOUNDS, TIN COMPOUNDS, TELLURIDES, SELENIDES, GERMANIUM, MANUFACTURING, SEMICONDUCTING FILMS, FIELD EFFECT TRANSISTORS, DAMAGE, RADIATION EFFECTS, ELECTRON IRRADIATION, SPACE ENVIRONMENTS, COMPUTER PROGRAMS, THESES
Field(s)/Group(s):
Electrical and Electronic Equipment, Infrared Detection and Detectors, Solid State Physics
Keyword(s):
LEAD TELLURIDES, LEAD SELENIDES, METAL INSULATOR SEMICONDUCTORS, CHARGE COUPLED DEVICES, TIN SELENIDE, TIN TELLURIDES
Report Date:
1973 Mar 01