Characteristics of Impatt Diode Reflection Amplifiers.

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Abstract:

IUM ARSENIDES, DOPING, PHASE SHIFT CIRCUITS, DESIGN, THESESIMPATT DIODESThe purpose of this study is to investigate the gain, stability, power saturation and bandwidth properties of microwave reflection amplifiers which employ IMPATT diodes as the active element, together with the dependence of all these properties upon device material, doping profile and operating conditions. The investigation provides a method for the design of stable negative-resistance amplifiers and an understanding of the limitations imposed on such amplifiers when the active device is an IMPATT diode. Data are presented which indicates that power addition, gain saturation and bandwidth are all optimized by devices with narrow avalanche widths, high current densities and low temperatures. Author Modified Abstract

Author(s):
Laton, R. W.
Author Organization(s):
MICHIGAN UNIV ANN ARBOR ELECTRON PHYSICS LAB
Descriptive Note:
Technical rept.,
Supplementary Note:
Doctoral thesis.
Pagination:
0192

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
037250-128, RADC-TR-73-61
Contract/Grant Number(s):
F30602-71-C-0099
Project Number(s):
ORA-037250
Monitor Series:
TR-73-61
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*MICROWAVE AMPLIFIERS, AVALANCHE DIODES, GAIN, STABILITY, BANDWIDTH, SILICON, GALLIUM ARSENIDES, DOPING, PHASE SHIFT CIRCUITS, THESES
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
*IMPATT DIODES
Report Date:
1973 Mar 01