A Unique High-Temperature, High-Pressure Crystal Growth System for Silicon Carbide.

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Abstract:

A high-pressure, high-temperature furnace system is described for crystal growth experiments using crucibles up to 13 cm in diameter and 26 cm high. The vertical temperature gradient is electronically controlled during growth such that the ends of the crucible can be maintained at temperatures above or below the crucible center. Temperatures up to 2800C can be maintained at pressures up to 50 atmospheres. A vacuum capability up to .000001 torr at 1800C has been incorporated into the system. Single crystals of alpha silicon carbide grown in this system at 2600C are described to illustrate its use. Author

Author(s):
Littler, J. R. ; Marshall, R. C. ; Ryan, C. E. ; Hawley, J. J. ; Berman, I.
Author Organization(s):
AIR FORCE CAMBRIDGE RESEARCH LABS L G HANSCOM FIELD MASS
Descriptive Note:
Instrumentation papers,
Pagination:
0017

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
AFCRL-IP-181, AFCRL-TR-73-0074
Task Number(s):
562006
Project Number(s):
AF-5620
 Subject Terms
Modernization Areas:
Microelectronics
Communities of Interest:
No COI(s) Identified
Descriptor(s):
*VACUUM FURNACES, *SILICON CARBIDES, *CRYSTAL GROWTH, CRUCIBLES, GRAPHITE, HEATING ELEMENTS, PRESSURE, TEMPERATURE
Field(s)/Group(s):
Test Facilities, Equipment and Methods, Crystallography
Report Date:
1973 Jan 24