Thin-Film Pb0.9Sn0.1Se Photoconductive Infrared Detectors: Photoconductivity Measurements.

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Abstract:

Pb0.9Sn0.1Se thin films were depositived on cleaved CaF2 and BaF2 substrates by vacuum evaporation methods. The as-deposited films were not photosensitive. Photo-conductivity was observed after the films had been isothermally annealed in Pb-Sn rich vapor to reduce their carrier concentrations. Blackbody 500K response measurements were made to determine the responsivity and detectivity of the thin-film samples. The wavelengths of photoconductive thresholds were determined by spectral response measurement and were in good agreement with the fundamental absorption edges. Photoconductive response times were measured using a GaAlAs heterojunction laser diode as the radiation source. Author Modified Abstract

Author(s):
Holmquist, Kurt Ervin
Author Organization(s):
NAVAL POSTGRADUATE SCHOOL MONTEREY CALIF
Descriptive Note:
Master's thesis,
Pagination:
0128

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Subject Terms
Communities of Interest:
Advanced Electronics
Descriptor(s):
*INFRARED DETECTORS, *SEMICONDUCTING FILMS, PHOTOSENSITIVITY, PHOTOCONDUCTIVITY, LEAD COMPOUNDS, TIN COMPOUNDS, SELENIDES, CHARGE CARRIERS, HALL EFFECT, TRANSIENTS, BLACKBODY RADIATION, TEST METHODS, THESES
Field(s)/Group(s):
Electrical and Electronic Equipment, Infrared Detection and Detectors, Solid State Physics
Keyword(s):
LEAD TIN SELENIDE FILMS, ALUMINUM GALLIUM ARSENIDE, BARIUM FLUORIDE, CALCIUM FLUORIDE, THIN FILMS
Report Date:
1972 Dec 01