Tunnel Diode and Its Microwave Amplification and Oscillation. Part 1,

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Abstract:

The tunnel diode is a new type of semiconductor device. Its operating theory is based on the penetration of electrons through the narrow p-n junction barrier by quantum mechanical tunneling. At present, more than 350 kinds of tunnel diodes are listed as commodities among which, those used in the microwave area have a resistive cutoff frequency approaching 30 GHz. The characteristic parameters of tunnel diodes used in the microwave area are shown in order to indicate the present level of tunnel diode development.

Author(s):
Wang, Shih-chieh
Author Organization(s):
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Supplementary Note:
Edited trans. of Tien Tzu Chi Shu (Mainland China) n2 p19-23 1964.
Annotation:
Tunnel Diode and Its Microwave Amplification and Oscillation. Part 1--Translation.
Pagination:
0027

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
FTD-HC-23-1698-72
 Subject Terms
Joint Capability Areas:
JCA_3.2_Engagement; JCA_3_Force Application
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*TUNNEL DIODES, MICROWAVE EQUIPMENT), SEMICONDUCTOR DEVICES, MICROWAVE AMPLIFIERS, MICROWAVE OSCILLATORS, RELIABILITY(ELECTRONICS), BAND THEORY OF SOLIDS, TUNNELING(ELECTRONICS), CHINA
Field(s)/Group(s):
Electrical and Electronic Equipment
Keyword(s):
TRANSLATIONS, EQUIVALENT CIRCUITS
Report Date:
1973 Feb 26