Use of Gallium Arsenide Crystals to Modulate Emission on 10.6 Micrometers Wavelength,

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Abstract:

An investigation was made into the transparency of high resistance specimens and the electro optical effect in them in connection with the feasibility of using GaAs crystals for modulating laser emission with a wavelength of 10.6 Mu. The results show that an IR modulator can be developed on the basis of GaAs crystals which operate at high layer power levels, in particular when cooling is used the authors used a thermoelectric cooler. A depth of modulation of 60 to 70 percent is achieved at a voltage with an amplitude of 1.5 kv. Author

Author(s):
Koblova, M. M. ; Nikolaev, I. V.
Author Organization(s):
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Supplementary Note:
Unedited rough draft trans. of mono. Problemy Peredachi Informatsii (Problems of Information Transmission) n.p., 1969 p376-382.
Annotation:
Use of Gallium Arsenide Crystals to Modulate Emission on 10.6 Micrometers Wavelength--Translation.
Pagination:
0009

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
FTD-HC-23-0848-72
 Subject Terms
Communities of Interest:
No COI(s) Identified
Descriptor(s):
(*GAS LASERS, INFRARED WINDOWS), (*INFRARED RADIATION, MODULATION), (*GALLIUM ARSENIDES, ELECTROOPTICS), INFRARED LASERS, COHERENT RADIATION, POLARIZATION, AMPLITUDE MODULATION, USSR
Field(s)/Group(s):
Lasers and Masers, Optics
Keyword(s):
LASER BEAMS, CARBON DIOXIDE LASERS, TRANSLATIONS
Report Date:
1972 Aug 01