Fundamental Studies of Semiconductor Heteroepitaxy

reportActive / Technical Report | Accession Number: AD0748424 | Open PDF

Abstract:

The objective of this program is to carry out a fundamental study of nucleation and film growth mechanisms in heteroepitaxial semiconductor thin films, and to apply the results to the preparation of improved films and thin- film devices on insulating substrates. Both theoretical and experimental investigations are involved, with emphasis on chemical vapor deposition CVD techniques applied to the Si-on-Al2O3, Si-on-MgAl2O4, and GaAs-on-Al2O3 systems. The accomplishments of the fourth six-month period are described in terms of seven program subtasks.

Author(s):
Ruth, Ralph P. ; Hughes, A. James ; Kenty, Joseph L. ; Manasevit, Harold M. ; Thorsen, Arthur C.
Author Organization(s):
ROCKWELL INTERNATIONAL ANAHEIM CA ELECTRONICS OPERATIONS
Descriptive Note:
Semiannual rept. no. 4, Jan-Jun 1972
Supplementary Note:
See also report dated Jan 1972, AD0736851.
Pagination:
0128

Security Markings

DOCUMENT & CONTEXTUAL SUMMARY

Distribution:
Approved For Public Release
Distribution Statement:
Approved For Public Release; Distribution Is Unlimited.

RECORD

Collection: TR
Identifying Numbers
Report Number(s):
C71-86.4/501
Contract/Grant Number(s):
DAAH01-70-C-1311, ARPA ORDER-1585
Monitor Series:
DARPA
 Subject Terms
Joint Capability Areas:
JCA_5_Command and Control; JCA_5.3_Planning; JCA_5.3.1_Analyze Problem; JCA_1.2.7_Experimentation; JCA_JCA_4.1.2_Sustain the Force; JCA_4.1_Deployment and Distribution; JCA_4.5.4_Requirements Definition; JCA_4.5_Operational Contract Support; JCA_5.2.2_Develop Knowledge and Situational Awareness; JCA_5.2_Understand; JCA_1.2.3_Educating; JCA_1.3.2_Personnel Management; JCA_4.6_Engineering; JCA_5.5.2_Task; JCA_5.5_Direct
Modernization Areas:
Microelectronics
Communities of Interest:
Advanced Electronics
Descriptor(s):
*EPITAXIAL GROWTH, *SEMICONDUCTING FILMS, ALUMINATES, ANISOTROPY, ELECTRON MICROSCOPY, FIELD EFFECT TRANSISTORS, GALLIUM ARSENIDES, MANUFACTURING, NUCLEATION, REACTION KINETICS, SILICON, SUBSTRATES, VAPOR PLATING
Field(s)/Group(s):
Manufacturing and Industrial Engineering and Control of Production Systems, Crystallography, Solid State Physics
Keyword(s):
CHEMICALS, VAPOR DEPOSITION, HETEROEPITAXIAL FILMS, THIN FILMS
Report Date:
1972 Jul 01